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Hall Current Measurement under Strong Magnetic Fields for Silicon MOS Inversion Layers

1980; Physical Society of Japan; Volume: 48; Issue: 1 Linguagem: Inglês

10.1143/jpsj.48.333

1347-4073

J. Wakabayashi, Shinji Kawaji,

Semiconductor materials and devices

Quantitative results of Hall conductivity σ x y in n -type silicon inversion layers have been obtained successfully by the use of the Hall current method. Results in the electron mobility dependence of the Landau level width are in good agreement with the theoretical prediction.