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Electron-Ion Recombination Rate Coefficients for SI i, SI ii, S ii, S iii, C ii, and C-like Ions C i, N ii, O iii, F iv, NE v, NA vi, MG vii, AL viii, SI ix, and S XI

1995; Institute of Physics; Volume: 101; Linguagem: Inglês

10.1086/192248

1538-4365

Sultana N. Nahar,

X-ray Spectroscopy and Fluorescence Analysis

view Abstract Citations (72) References (16) Co-Reads Similar Papers Volume Content Graphics Metrics Export Citation NASA/ADS Electron-Ion Recombination Rate Coefficients for Si I, Si II, S II, S III, C II, and C-like Ions C i, N II, O III, F IV, Ne V, Na VI, Mg VII, Al VIII, Si IX, and S XI Nahar, Sultana N. Abstract A new unified treatment for electron-ion recombination is employed to obtain recombination rate coefficients for silicon, sulfur, and carbon ions of importance in the study of the interstellar medium and H II regions in general. Improved and extended results are also presented for ions in the carbon isoelectronic sequence. Recombination rate coefficients are tabulated at a wide range of temperatures, from 101 to l09 K. These rates correspond to total electron-ion recombination incorporating both the radiative and dielectronic recombination processes calculated in an ab initio manner. Publication: The Astrophysical Journal Supplement Series Pub Date: December 1995 DOI: 10.1086/192248 Bibcode: 1995ApJS..101..423N Keywords: ATOMIC DATA; ATOMIC PROCESSES full text sources ADS | Related Materials (1) Erratum: 1996ApJS..106..213N