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High resistivity annealed low-temperature GaAs with 100 fs lifetimes

2003; American Institute of Physics; Volume: 83; Issue: 20 Linguagem: Inglês

10.1063/1.1628389

1520-8842

I. S. Gregory, Colin Baker, W. R. Tribe, Michael J. Evans, Harvey E. Beere, E. H. Linfield, A. G. Davies, M. Missous,

Terahertz technology and applications

We demonstrate the critical effect of postgrowth annealing temperature on the properties of low-temperature-grown GaAs. By using annealing temperatures substantially below the 500–600 °C commonly reported, GaAs with high resistivity and with carrier lifetimes as short as 100 fs can be routinely obtained. We discuss the optimum, but different, anneal conditions required for terahertz photoconductive emitters and detectors, and illustrate their use in a continuous-wave system.