Electronic properties of grain boundaries in SrTiO3 and BaTiO3 ceramics
1995; Elsevier BV; Volume: 75; Linguagem: Inglês
10.1016/0167-2738(94)00152-i
ISSN1872-7689
Autores Tópico(s)Advanced ceramic materials synthesis
ResumoThe grain boundary space charge depletion layer in acceptor-doped SrTiO3 and BaTiO3 ceramics is investigated by an impedance analysis in the time domain and is described in terms of a simplified back-to-back double Schottky barrier model. A numerical simulation is employed to analyze the defect chemistry in the depletion layer and to elaborate a refined Schottky model. The local distribution of the donor-type grain boundary states causing the depletion layer and the resulting band bending are discussed.
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