Molecular beam epitaxial growth of high quality InSb
1994; American Institute of Physics; Volume: 65; Issue: 26 Linguagem: Inglês
10.1063/1.112384
ISSN1520-8842
AutoresE. Michel, Gurmit Jagjit Singh, S. Slivken, C. Besikci, Ph. Bove, Ian T. Ferguson, Manijeh Razeghi,
Tópico(s)Nanowire Synthesis and Applications
ResumoIn this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V−1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.
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