Tunnel-magnetoresistance system with an amorphous detection layer
2002; American Institute of Physics; Volume: 91; Issue: 3 Linguagem: Inglês
10.1063/1.1426236
ISSN1520-8850
AutoresA. Käufler, Yi Luo, K. Samwer, G. Gieres, M. Vieth, J. Wecker,
Tópico(s)Magnetic Properties and Applications
ResumoWe have studied magnetic tunnel junctions using an amorphous CoFeNiSiB soft magnetic layer. At room temperature a tunnel-magnetoresistance ratio of 12% was achieved with a switching field of the amorphous layer of 12 Oe. The effect could be enhanced up to 22% by annealing. Investigations on single amorphous layers show a thermal stability up to 350 °C annealing temperature even for very thin layers. Due to the special preparation technique, an in-plane anisotropy is induced resulting from an oblique-incidence effect which presumably affects the short-range order of the amorphous phase.
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