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Efficient CdSe/CdS Quantum Dot Light-Emitting Diodes Using a Thermally Polymerized Hole Transport Layer

2006; American Chemical Society; Volume: 6; Issue: 3 Linguagem: Inglês

10.1021/nl052417e

1530-6992

Jialong Zhao, Julie A. Bardecker, Andrea M. Munro, Michelle S. Liu, Yu‐Hua Niu, I‐Kang Ding, Jingdong Luo, Baoquan Chen, Alex K.‐Y. Jen, David S. Ginger,

Perovskite Materials and Applications

We report multilayer nanocrystal quantum dot light-emitting diodes (QD-LEDs) fabricated by spin-coating a monolayer of colloidal CdSe/CdS nanocrystals on top of thermally polymerized solvent-resistant hole-transport layers (HTLs). We obtain high-quality QD layers of controlled thickness (down to submonolayer) simply by spin-coating QD solutions directly onto the HTL. The resulting QD-LEDs exhibit narrow ( approximately 30 nm, fwhm) electroluminescence from the QDs with virtually no emission from the organic matrix at any voltage. Using multiple spin-on HTLs improves the external quantum efficiency of the QD-LEDs to approximately 0.8% at a brightness of 100 cd/m(2) (with a maximum brightness over 1,000 cd/m(2)). We conclude that QD-LEDs could be made more efficient by further optimization of the organic semiconductors.