A Resistive Memory in Semiconducting BiFeO 3 Thin‐Film Capacitors
2011; Volume: 23; Issue: 10 Linguagem: Inglês
10.1002/adma.201004317
ISSN1521-4095
AutoresAnquan Jiang, Can Wang, Kui Jin, Xiao Bing Liu, J. F. Scott, Cheol Seong Hwang, Ting Tang, Hui Lu, Guo Zhen Yang,
Tópico(s)Ferroelectric and Piezoelectric Materials
ResumoA ferroelectric-resistive random access memory consisting of a conductive BiFeO3 epitaxial thin film with a unipolar diode current modulated by electric polarization orientation is reported. This device has a memory that lasts for months, a sufficiently high on current and on/off ratio to permit ordinary sense amplifiers to measure "1" or "0", and is fully compatible with complementary metal-oxide semiconductor processing.
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