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High-power AlGaAs/GaAs single quantum well surface-emitting lasers with integrated 45° beam deflectors

1990; American Institute of Physics; Volume: 57; Issue: 20 Linguagem: Inglês

10.1063/1.103937

1520-8842

Jaehoon Kim, Robert J. Lang, Anders Larsson, Luke P. Lee, Authi A. Narayanan,

Photonic and Optical Devices

We report on high-power AlGaAs/GaAs graded-index single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45° beam deflectors fabricated by a tilted ion beam etching technique. 100-μm-wide, 500-μm-long, broad-area SELs exhibited a threshold current of 300 mA, a peak power of more than 380 mW, and an external differential quantum efficiency of 17% without facet coating. The SELs showed stable operation up to 7th. These results show the highest power and external differential quantum efficiency reported to date for 45° beam deflecting SELs. The full widths at half maximum of the surface-emitting far-field pattern parallel and perpendicular to the laser axis were 8.5° and 14°, respectively.