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Effectiveness of anisotropic etching of silicon in aqueous alkaline solutions

2001; Elsevier BV; Volume: 70; Issue: 1 Linguagem: Inglês

10.1016/s0927-0248(00)00414-1

1879-3398

Prashant Singh, Ravi Kumar, Mohan Lal, S.N. Singh, B. K. Das,

Thin-Film Transistor Technologies

Optical effectiveness of anisotropic etching of (1 0 0) silicon in inorganic alkaline solution has been studied from the view point of its application in commercial silicon solar cells. The damage caused by ID saw or wire saw during slicing of the wafer is required to be removed for fabrication of solar cells. The etch rates for removal of the surface damages for boron doped Czochralski wafers of 1–2 Ω cm resistivity in 20% NaOH solution at 80°C was measured and was found to be ∼1.4 μm/min. After the damage removal, texturisation was obtained in 2% NaOH solution buffered with isopropyl alcohol at 80°C. An optical effectiveness parameter feff,λ was defined and its value was estimated from the study of reflectivity and topography of the wafers textured for different durations of time. The kinetics of anisotropic etching was studied which indicated that growth of pyramids begins at preferential sites which may arise due to crystalline defects or wetting. Silicon solar cells have been realized by standard process involving phosphorous diffusion and vacuum evaporated front and back contacts. The value of optical effectiveness parameter is found to have a direct correlation with the improvement in short circuit current density of the textured cells.