Intrinsic carrier concentrations and effective masses in Hg1− x Cd x Te
1985; American Institute of Physics; Volume: 58; Issue: 1 Linguagem: Inglês
10.1063/1.335685
ISSN1520-8850
AutoresFrank L. Madarasz, Frank Szmulowicz, John R. McBath,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoIntrinsic carrier concentrations are calculated for the semiconductor alloy Hg1−xCdxTe. Unlike previous calculations we make no approximations to the band structure, and hence to the density of states, beyond those inherent in the Kane k ⋅ p theory. Our results are compared with the recent calculation of Hansen and Schmit. Close agreement is found in the low compositional x range. However, significant differences, up to 50%, were found for higher alloy compositions. The reasons for the disagreement between the two calculations are discussed.
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