Measurement of Minority Carrier Lifetime in Germanium
1952; Institute of Electrical and Electronics Engineers; Volume: 40; Issue: 11 Linguagem: Inglês
10.1109/jrproc.1952.273973
ISSN2162-6634
Autores Tópico(s)Ion-surface interactions and analysis
ResumoA method for measuring the lifetime of minority carriers in germanium is described. Basically, it consists of liberating the carriers optically on a flat face of a crystal and measuring the concentration of minority carriers as a function of distance from the point of liberation. The mathematical model is analyzed and experimental results are presented here.
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