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Structural Phase Control in Self-Catalyzed Growth of GaAs Nanowires on Silicon (111)

2010; American Chemical Society; Volume: 10; Issue: 11 Linguagem: Inglês

10.1021/nl102308k

1530-6992

Peter Krogstrup, Ronit Popovitz‐Biro, Erik Johnson, Morten Hannibal Madsen, Jesper Nygård, Hadas Shtrikman,

Surface and Thin Film Phenomena

Au free GaAs nanowires with zinc blende structure, free of twin planes and with remarkable aspect ratios, have been grown on (111) Si substrates by molecular beam epitaxy. Nanowires with diameters down to 20 nm are obtained using a thin native oxide layer on the Si substrates. We discuss how the structural phase distribution along the wire length is controlled by the effective V/III ratio and temperature at the growth interface and explain how to obtain a pure twin plane free zinc blende structure.