Electric-dipole spin-resonance signals related to extended interstitial agglomerates in silicon
2005; American Institute of Physics; Volume: 98; Issue: 4 Linguagem: Inglês
10.1063/1.2001750
ISSN1520-8850
AutoresTeimuraz Mchedlidze, S. Binetti, A. Le Donne, S. Pizzini, M. Suezawa,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoThree electric-dipole spin-resonance signals, labeled TU7, TU8, and TU9, were detected after subjecting oxygen-rich silicon samples to two-step annealing procedures at 450 and 650°C for prolonged times. The formation and structural evolution of large interstitial agglomerates, known as rodlike defects, occur in oxygen-rich silicon material during similar annealing procedures. Comparison of parameters and formation peculiarities of the defects, inferred from the investigation of the detected signals, with those previously reported for rodlike defects, allowed the assigning of the TU7, TU8, and TU9 spectra to the line-interstitial defects, the planar defects, and the dislocation dipoles, respectively. Correlations of the spin-resonance signals and peculiarities in the photoluminescence spectra for the samples are reported and analyzed.
Referência(s)