Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
2005; Institute of Physics; Volume: 44; Issue: 6R Linguagem: Inglês
10.1143/jjap.44.4019
ISSN1347-4065
AutoresSho Shirakata, Masahiko Kondow, T. Kitatani,
Tópico(s)GaN-based semiconductor devices and materials
ResumoRaman studies were performed on GaN 0.025 As 0.975 and Ga 0.94 In 0.06 N 0.025 As 0.975 epilayers grown on (100) GaAs. N alloying enhanced the forbidden TO phonon, while In alloying had a negligible effect on it. The forbidden TO phonon had an A 1 symmetry, in contrast to that of Ga 0.969 In 0.031 As having a T 2 symmetry. In GaInNAs, thermal annealing led to the splitting of a N-related local vibrational mode (LVM) into a doublet (472 and 490 cm -1 ), while no change was observed in GaNAs. LVM is discussed in terms of In–N bond formation.
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