Dry etch damage and recovery of gallium indium zinc oxide thin-film transistors with etch-back structures
2012; Elsevier BV; Volume: 33; Issue: 3 Linguagem: Inglês
10.1016/j.displa.2012.05.001
ISSN1872-7387
Autores Tópico(s)Silicon and Solar Cell Technologies
ResumoWe studied the degradation and recovery of gallium indium zinc oxide (GIZO) thin-film transistors (TFTs) with etch-back (EB) structures during the fabrication process. EB GIZO TFTs were degraded by a source/drain dry etch process that formed a conductive surface layer. Their switching performance was recovered using an O2 ashing process that oxidized the conductive surface layer. In addition, a wet etch of the backside of the GIZO recovered the performance of the GIZO TFTs. EB GIZO TFTs with a field-effect mobility of 14.5 cm2 V−1 s−1 and a subthreshold swing of 0.1 V/dec were obtained without plasma treatment.
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