In-situ heavily p -type doping of over 1020 cm−3 in semiconducting BaSi2 thin films for solar cells applications
2013; American Institute of Physics; Volume: 102; Issue: 11 Linguagem: Inglês
10.1063/1.4796142
ISSN1520-8842
AutoresM. Ajmal Khan, Kosuke O. Hara, Weijie Du, Masako Baba, Kotaro Nakamura, Mitsushi Suzuno, Kaoru Toko, Noritaka Usami, Takashi Suemasu,
Tópico(s)Semiconductor materials and devices
ResumoB-doped p-BaSi2 layer growth by molecular beam epitaxy and the influence of rapid thermal annealing (RTA) on hole concentrations were presented. The hole concentration was controlled in the range between 1017 and 1020 cm−3 at room temperature by changing the temperature of the B Knudsen cell crucible. The acceptor level of the B atoms was estimated to be approximately 23 meV. High hole concentrations exceeding 1 × 1020 cm−3 were achieved via dopant activation using RTA at 800 °C in Ar. The activation efficiency was increased up to 10%.
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