The effect of ion bombardment on the strain gauge factor of thin gold films
1975; Elsevier BV; Volume: 27; Issue: 2 Linguagem: Inglês
10.1016/0040-6090(75)90032-2
ISSN1879-2731
AutoresR.G.R. Robinson, K.G. Stephens, I. H. Wilson,
Tópico(s)Semiconductor materials and devices
ResumoAbstract Evaporated gold films of approximately 200 a in thickness have been bombarded with argon ions to increase the sheet resistance by sputter etching to a maximum of 40 kΩ/□. The strain gauge coefficient of resistance γ ( i.e. the fractional change in resistance per unit strain) was measured for films with a wide range of sheet resistance, and was found to be almost invariant with an average value of 2.6. This contrasts greatly with the published values of γ of up to 100 for thin island-structure evaporated films of similar sheet resistance. The temperature coefficient β of the strain gauge factor was found to be similar in magnitude but opposite in sign to the temperature coefficient of resistance α, which was measured as + 12 × 10 4 °C -1 . The measured values of γ, β and α agree well with the values calculated by assuming that the metallic conduction is modified by reduction of the electron mean free path. We therefore conclude that a connected metallic layer still exists even at very high values of sheet resistance.
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