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InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode

1998; Institute of Physics; Volume: 37; Issue: 9A Linguagem: Inglês

10.1143/jjap.37.l1020

1347-4065

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano, Kazuyuki Chocho,

Semiconductor Lasers and Optical Devices

An InGaN multiquantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA/cm 2 were obtained when the number of InGaN well layers was two. The InGaN MQW LD was grown on a free-standing GaN substrate that was obtained by removing the sapphire substrate. The LDs with cleaved mirror facets showed an output power as high as 30 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed by reducing the ridge width to a value as small as 2 µm. The lifetime of the LDs at a constant output power of 5 mW was about 160 h under CW operation at an ambient temperature of 50°C, due to a high threshold current density of 6 kA/cm 2 .