Band edge absorption in CdxHg1−xTe grown by metal-organic vapour phase epitaxy
1989; Pergamon Press; Volume: 29; Issue: 6 Linguagem: Inglês
10.1016/0020-0891(89)90024-9
ISSN1878-1160
AutoresC. D. Maxey, P. Capper, B.C. Easton, P.A.C. Whiffin,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoThe first absorption coefficient spectra determined in the region of the fundamental band edge of metal-organic vapour phase grown CdxHg1−xTe (CMT) with x between 0.2 and 0.3 are presented. Analysis of these spectra shows that the optical band edge correlates with αe, between 1000–2000 cm−1. Using these spectra the form of the absorbance curve of uniform CMT can be generated, which when compared with experimental data can be used to obtain a qualitative assessment of the depth uniformity of epitaxial layers.
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