Optical switch-on of silicon carbide thyristor
2002; Institution of Engineering and Technology; Volume: 38; Issue: 12 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresM. E. Levinshteĭn, P. A. Ivanov, Anant Agarwal, John W. Palmour,
Tópico(s)Thin-Film Transistor Technologies
ResumoOptical switch-on of a silicon carbide thyristor has been demonstrated for the first time. A 2.6 kV 4H-SiC thyristor can be turned on by the light pulse of an ultraviolet laser with wavelength λ=337 nm. The threshold energy of the light pulse, required to turn the thyristor on, is Jth≃0.75 µJ. At light pulse energy of J∼15 µJ the thyristor is turned on extremely fast and uniformly over its full area.
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