Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors
2003; Elsevier BV; Volume: 47; Issue: 6 Linguagem: Inglês
10.1016/s0038-1101(02)00473-2
ISSN1879-2405
AutoresM. A. Mastro, D. Tsvetkov, V. Soukhoveev, A. Usikov, V. Dmitriev, B. Luo, F. Ren, Kwang Hyeon Baik, S. J. Pearton,
Tópico(s)ZnO doping and properties
ResumoHigh quality undoped AlGaN/GaN high electron mobility transistors (HEMTs) structures have been grown by hydride vapor phase epitaxy (HVPE), for the first time. The morphology of the films grown on Al2O3 substrates is excellent, with a root-mean-square roughness of ∼0.2 nm over 10×10μm2 measurement area. Capacitance–voltage measurements show the formation of a dense sheet of charge at the AlGaN/GaN interface. This is the first ever report of the formation of a two-dimensional electron gas in a nitride structure grown by HVPE. HEMTs with 1 μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain–source current above 0.6 A/mm.
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