Photo and thermal stability enhancement of amorphous Hf–In–Zn–O thin-film transistors by the modulation of back channel composition
2011; American Institute of Physics; Volume: 98; Issue: 7 Linguagem: Inglês
10.1063/1.3555446
ISSN1520-8842
AutoresW. J. Maeng, Joon Seok Park, Hyun‐Suk Kim, Kwanghee Lee, Kyung‐Bae Park, Kyoung Seok Son, Tae Sang Kim, Eok Su Kim, Yong Nam Ham, Myungkwan Ryu, Sangyoon Lee,
Tópico(s)Silicon and Solar Cell Technologies
ResumoThe sensitivity and stability of amorphous Hf–In–Zn–O thin-film transistors with respect to visible light radiation and thermal annealing were studied. The photo and thermal stability of the devices were significantly improved by the application of a double active layer that consists of a low conductivity back channel with reduced indium content. From this double layer, significantly lower shifts in Vturn on upon illumination and thermal annealing could be achieved. However, no degradation in the field-effect mobility and reliability of the devices was observed.
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