Effects of a low-doped spacer layer in the emitter of a resonant tunneling diode
1990; Elsevier BV; Volume: 7; Issue: 2 Linguagem: Inglês
10.1016/0749-6036(90)90126-r
ISSN1096-3677
AutoresMichael J. Paulus, E. Koenig, B. Jogai, C. Bozada, C.I. Huang, C. E. Stutz, K. R. Evans,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoAn inflection is observed before the current peak in the current-voltage (I–V) curves of AlAs/GaAs superlattice resonant tunneling diodes with 500 Å 2×1016 cm−3n-GaAs spacer layers between the n+ contact layers and the AlAs barriers. The inflection cannot be conclusively accounted for if the established model of end-to-end tunneling between the n+ contacts is applied. Evidence of an electron accumulation layer adjacent to the first upstream AlAs barrier suggests electron transport through the structure may be a two-step process and the I–V singularity a result thereof. The phenomenon is investigated by calculating conduction band profiles of the structures using a self-consistent solution to the time-independent Schrödinger and Poisson equations.
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