Geometrical and electronic structure of the MBE-prepared GaAs(113)A surface
1997; Elsevier BV; Volume: 377-379; Linguagem: Inglês
10.1016/s0039-6028(96)01377-5
ISSN1879-2758
AutoresC. Setzer, J. Platen, P. Geng, W. Ranke, K. Jacobi,
Tópico(s)Surface and Thin Film Phenomena
ResumoAbstract The GaAs (113)A surface was prepared by molecular beam epitaxy and investigated in situ by means of low-energy electron diffraction, surface core level spectroscopy and angle-resolved valence band photoemission. One stable, (8 × 1) reconstructed surface was prepared. Surface core level shifts were observed for As 3d (530 meV) and Ga (−460 meV, 360meV) which support a recently proposed model [1]. Two surface resonances were observed at −1.1 and −3.7 eV below the valence band maximum.
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