Gain characteristics and femto-second optical pulse response of 1550nm-band multi-stacked QD-SOA grown on InP(311)B substrate
2015; Elsevier BV; Volume: 344; Linguagem: Inglês
10.1016/j.optcom.2015.01.034
ISSN1873-0310
AutoresAtsushi Matsumoto, Yuki Takei, A. Matsushita, Kouichi Akahane, Yuichi Matsushima, Hiroshi Ishikawa, Katsuyuki Utaka,
Tópico(s)Advanced Photonic Communication Systems
ResumoIn this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, for the application to ultra-fast all-optical logic gate devices. The device length was 1650 μm, and a maximum gain of 35 dB was obtained under an injection current of 500 mA. We also input two serial femto-second duplicated pulses into the QD-SOA by changing the duration and observed the output auto-correlation waveforms. As a result, an effective carrier transition time was estimated to be about 1 ps.
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