Be+ ion implantation in Ga0.96Al0.04Sb epitaxial layers
1990; American Institute of Physics; Volume: 68; Issue: 8 Linguagem: Inglês
10.1063/1.346271
ISSN1520-8850
AutoresM. Pérotin, L. Gouskov, H. Luquet, P. Abiale Abi, Aneela Sabir, A. Pérez,
Tópico(s)Semiconductor materials and devices
ResumoBe ions are implanted into Te-doped Ga0.96Al0.04Sb layers grown by liquid-phase epitaxy. Be distribution is analyzed from secondary-ion mass spectrometry profiles and is found to be in good agreement with a computed simulation one. Hall-effect measurements show a complete electrical activity of the Be-implanted ions. Mesa devices are realized on the Ga0.96Al0.04Sb p+/Ga0.96Al0.04Sb n−/GaSb+ system: Be implantation leads to good quality junctions exhibiting homogeneous multiplication.
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