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Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane

2007; Institute of Physics; Volume: 46; Issue: 1L Linguagem: Inglês

10.1143/jjap.46.l40

1347-4065

Yuzuru Narita, Atsushi Konno, Hideki Nakazawa, Takashi Itoh, Kanji Yasui, Tetsuo Endoh, Maki Suemitsu,

Copper Interconnects and Reliability

Heteroepitaxial growth of 3C-SiC has been conducted on Si(001) substrate using monomethylsilane as a single source gas. By evaluating the crystalliniy of the film as a function of the growth temperature T and pressure P, a process window for a good epitaxy has been obtained, which is expressed as Pc1(T)<P<Pc2(T). Both of the two critical pressures increase with T, and are both successfully expressed with a single analytical function derived from the hydrogen adsorption/desorption balance on the surface.