Relationship between plasma parameters and film microstructure in radio frequency magnetron sputter deposition of barium strontium titanate
1998; American Institute of Physics; Volume: 83; Issue: 2 Linguagem: Inglês
10.1063/1.366802
ISSN1520-8850
AutoresBrajesh Kumar Panda, A. Dhar, G. D. Nigam, D. Bhattacharya, S. K. Ray,
Tópico(s)Ferroelectric and Piezoelectric Materials
ResumoRadio frequency magnetron sputtered Ba0.8Sr0.2TiO3 thin films have been deposited on silicon and Si/SiO2/SiN/Pt substrates. The analysis of plasma discharge has been carried out using the Langmuir probe technique. Both the pressure and power have been found to influence the ion density and self-bias of the target. Introduction of oxygen into the discharge effectively decreases the ion density. The structural and electrical properties have been investigated using x-ray diffraction, atomic force microscopy of deposited films and capacitance–voltage, conductance–voltage, and current density–electric field characteristics of fabricated capacitors. The growth and orientation of the films have been found to depend upon the type of substrates and deposition temperatures. The 〈100〉 texture in the film is promoted at a pressure 0.25 Torr with a moderately high value of ion density and low ion bombardment energy. Films deposited on Si/SiO2/SiN/Pt substrate have shown higher dielectric constant (191) and lower leakage current density (2.8×10−6 A/cm2 at 100 kV/cm) compared to that on silicon.
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