Admittance spectroscopy: A powerful characterization technique for semiconductor crystals—Application to ZnTe
1980; Elsevier BV; Volume: 23; Issue: 11 Linguagem: Inglês
10.1016/0038-1101(80)90028-3
ISSN1879-2405
AutoresJ.L. Pautrat, B. Katircioǧlu, N. Magnéa, D. Bensahel, J. C. Pfister, L. Revoil,
Tópico(s)Silicon and Solar Cell Technologies
ResumoThe admittance spectroscopy technique is shown to be a very convenient tool for analyzing majority carrier traps: energy level, capture cross section and concentrations are easily obtained without complicated mathematical treatment. The series resistance in the material underlying the Schottky or pn junction is also detected when the free carriers are freezing out. It allows to get the shallowest level energy and its compensation ratio. The method has been applied to ZnTe material analysis and the effect on the admittance of six different acceptors is demonstrated. When comparing the electrically determined ionization energy of a given impurity with its optical value the former appears as systematically lower but most of the difference can be ascribed to Poole Frenkel or impurity concentration effects.
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