Calculation of impact ionization enhanced photovoltaic efficiency
1988; Elsevier BV; Volume: 25; Issue: 2 Linguagem: Inglês
10.1016/0379-6787(88)90020-8
ISSN1878-2655
Autores Tópico(s)Semiconductor Quantum Structures and Devices
ResumoA possible structure for increased single junction photovoltaic efficiency is a heterojunction diode with bandgaps differing by a factor of two or more. Excess energy from carriers photogenerated in the wide bandgap material may excite additional carriers in the narrow bandgap material by impact ionization. Photovoltaic efficiencies are calculated as a function of bandgap for both ideal and good quality solar cells. Assuming a plausible solar spectrum, the maximum efficiency may be increased by impact ionization, but the potential gain is relatively modest. Ideal cell maximum efficiency can be increased 1.5%; with more realistic assumptions, the increase is less than 1%.
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