Portal de Periódicos da CAPES

Electrochemical Doping in Electrolyte-Gated Polymer Transistors

2007; American Chemical Society; Volume: 129; Issue: 46 Linguagem: Inglês

10.1021/ja0749845

1943-2984

Jonathan D. Yuen, A. S. Dhoot, Ebinazar B. Namdas, Nelson E. Coates, Martin Heeney, Iain McCulloch, D. Moses, Alan J. Heeger,

Analytical Chemistry and Sensors

By comparing the changes in π−π* absorption with the transconductance in PEO−LiClO4 electrolyte-gated FETs, we have demonstrated that the high channel currents obtained at low gate voltages result from reversible electrochemical doping of the semiconducting polymer film. At low temperatures, the conductivity of the electrochemically doped poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT-C14, is nonlinear with a crossover from dσ(T)/dT > 0 to dσ(T)/dT ≈ 0 as a function of the source-drain voltage. High current densities, up to 106 A/cm2 at 4.2 K, can be sustained in the electrochemically doped PBTTT-C14 films.