Gas sensing properties of p-type semiconducting Cr-doped TiO2 thin films
2002; Elsevier BV; Volume: 83; Issue: 1-3 Linguagem: Inglês
10.1016/s0925-4005(01)01031-0
ISSN1873-3077
AutoresYongxiang Li, Wojtek Wlodarski, Kosmas Galatsis, Sayed Hassib Moslih, Jared H. Cole, Salvy P. Russo, Natasha Rockelmann,
Tópico(s)Analytical Chemistry and Sensors
ResumoCr2O3–TiO2 thin films were prepared from the sol–gel process. Titanium butoxide was used as the precursor material. The solution was mixed with a chromium compound then spun onto sapphire and silicon substrates at 2500 rpm for 30 s. The films were annealied at temperatures of between 400 and 700 °C for 1 h. The X-ray diffraction (XRD), scanning electronic microscope (SEM), Rutherford backscatter spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS) techniques were employed for microstructural characterazations. The responses to both NO2 and O2 gases confirmed that the films are of a p-type behaviour at operating temperatures between 350 and 400 °C. The films showed a good response to oxygen, in the range from 100 ppm to 10% of O2 at an operating temperature of 370 °C. The response is also fast and stable. The p-type Cr-doped TiO2 thin films have potential for development of a novel gas sensors.
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