A lean-burn oxygen sensor consisting of a dual-disc semiconductor

1988; Elsevier BV; Volume: 14; Issue: 4 Linguagem: Inglês

10.1016/0250-6874(88)80022-2

ISSN

1873-3050

Autores

Yasuhiro Shimizu, Yoshiki Fukuyama, Chunying Yu, Hiromichi Arai,

Tópico(s)

Gas Sensing Nanomaterials and Sensors

Resumo

The oxygen sensitivity of SrTiO3 doped with Al2O3 was sufficiently high in the lean-burn region. However, the usefulness of these specimens as oxygen sensors was limited by the fact that a transition into n-type semiconductivity appeared in the vicinity of the stoichiometric point of air-fuel combustion, due to the small value of the solubility limit of Al2O3 in SrTiO3. On the other hand, Cr2O3 retained p-type semiconductivity even in the richburn region. Thus the properties of a dual-disc semiconductor device made by electrically contacting discs of Sr0.99Al0.01O3 — δ and Cr2O3 in series with a platinum mesh were investigated for use as a lean-burn oxygen sensor. The SrTi0.99Al0.01O3 — δ/Cr2O3 device exhibited a large change in resistance in the lean-burn region and a negligible change in the rich-burn region. Furthermore, the device had a good reproducibility of operation and a short response time of less than 400 ms. These results have proved that the device is useful for a lean-burn oxygen sensor.

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