Portal de Periódicos da CAPES

GaN/AlGaN multiple quantum wells on a -plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

2003; American Institute of Physics; Volume: 83; Issue: 13 Linguagem: Inglês

10.1063/1.1614835

1520-8842

Wenhong Sun, Jinwei Yang, C. Q. Chen, Jianping Zhang, Mikhail Gaevski, E. Kuokštis, V. Adivarahan, H. M. Wang, Zheng Gong, M. Y. Su, M. Asif Khan,

Photocathodes and Microchannel Plates

We investigated the growth of GaN/Al0.20Ga0.80N multiple quantum wells (MQWs) on selective-area-grown a-plane GaN pillars over r-plane sapphire. In contrast to the MQWs grown on planar a-plane GaN templates, these GaN/Al0.20Ga0.8N MQWs on the pillars exhibited pit-free and atomically smooth surface morphology. Their structural quality and their UV emission (at 357 nm) increased with the underlying pillar height. The epitaxy of GaN/AlGaN MQWs on the selective-area-grown pillars is thus a promising and simple approach for fabricating stripe-geometry, high-efficiency, nonpolar UV emitters.