Optimum design of a 4-Gbit/s GaAs MESFET optical preamplifier
1987; Institute of Electrical and Electronics Engineers; Volume: 5; Issue: 3 Linguagem: Inglês
10.1109/jlt.1987.1075519
ISSN1558-2213
Autores Tópico(s)Semiconductor Quantum Structures and Devices
ResumoAn analysis for determining the optimum MESFET gate width to optimize the sensitivity of a high-speed optical preamplifier is presented. A full MESFET model is employed including correlated gate and drain noise sources. The design of an optimum sensitivity monolithic shunt feedback amplifier, including stability requirements, is investigated. The results show that the optimum gate width for minimizing input equivalent noise is significantly larger than earlier simplfied predictions. A sensitivity improvement of 1.2 dB is demonstrated for a 4-Gbit/s MESFET optical amplifier, and results showing the dependence of optimum FET width on photodetector capacitance are described.
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