Electrical conductivity of combustion flame synthesized diamond
1994; American Institute of Physics; Volume: 64; Issue: 17 Linguagem: Inglês
10.1063/1.111685
ISSN1520-8842
AutoresK. V. Ravi, C. A. Koch, Darin S. Olson, Ping Sen Choong, Jan W. Vandersande, Zoltán Lenčéš,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoThe electrical conductivity, from room temperature to 1000 °C, of combustion flame synthesized diamond films and free-standing diamond slabs are demonstrated to be up to two orders of magnitude lower than that of type IIa natural diamond crystals. The low conductivity, indicative of high purity, has been achieved at diamond growths rates of 5–10 μm/h, considerably higher than that achievable with other diamond synthesis techniques. These high growth rates have been achieved over areas of 5 cm×5 cm and both thin (10 μm) films on silicon substrates and thick (∼80 μm), free-standing diamond slabs exhibit similar electrical behavior. The high purity of this diamond is attributed to the presence of oxidizing species in the flame ambient which are more effective than hydrogen in removing any nondiamond forms of carbon and other impurities from the growing diamond film.
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