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Achievement of 4.51% conversion efficiency using ZnO recombination barrier layer in TiO2 based dye-sensitized solar cells

2006; American Institute of Physics; Volume: 89; Issue: 25 Linguagem: Inglês

10.1063/1.2410240

1520-8842

Seung-Jae Roh, Rajaram S. Mane, Sun-Ki Min, Won-Joo Lee, C.D. Lokhande, Sung‐Hwan Han,

Quantum Dots Synthesis And Properties

The authors report the use of chemically deposited ZnO recombination barrier layer for improved efficiency of TiO2 based dye-sensitized solar cells. The ZnO layers of different thicknesses were deposited on spin coated porous TiO2. The presence of ZnO over TiO2 was confirmed by x-ray diffraction, electron dispersive x-ray analysis, and supported by x-ray photoelectron spectroscopy, proved inherent energy barrier between the porous TiO2 electrode and lithium iodide electrolyte. They found that TiO2 based dye-sensitized solar cell with 30nm ZnO layer thickness showed 4.51% efficiency due to the formation of efficient recombination barrier at electrode/electrolyte interface. Further increase in ZnO barrier thickness may leak the electrons injected from the dye due to its low electron effective mass of 0.2me.