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Redistribution of Diffused Boron in Silicon by Thermal Oxidation

1964; Institute of Physics; Volume: 3; Issue: 7 Linguagem: Inglês

10.1143/jjap.3.377

1347-4065

Taketoshi Kato, Yoshio Nishi,

Semiconductor materials and devices

Redistribution phenomena of diffused boron due thermal oxidation of silicon have been studied. Mathematical formulation of the redistribution phenomena is proposed and analytical solution of the problem is given approximately by the method of Green's function. Numerical calculations are carried out for several combinations of physical constants and compared with experiment. The redistribution phenomena are well described by the model in which the growth of oxide occurs at the silicon-silicon dioxide interface and out diffusion of boron through the oxide film is negligibly small. The experiments have been performed in the range of 1180°–1230°C under one atmospheric pressure of dry oxygen and the segregation coefficient is determined to be about 10 in this temperature range.