Simulation experiment on chemical sputtering of carbides for the ECR and glow discharge cleaning
1984; Elsevier BV; Volume: 128-129; Linguagem: Inglês
10.1016/0022-3115(84)90472-0
ISSN1873-4820
AutoresYūichi Sakamoto, H. Oyama, Sadanori KAKINUMA,
Tópico(s)Silicon Carbide Semiconductor Technologies
ResumoLow Z carbides will be widely used as first wall materials in CTR devices. Prior to the production of hot plasmas, it is necessary to remove impurities like oxygen by applying discharge cleaning, which might change the surface composition because of physical and chemical sputtering. This paper shows the difference in chemical sputtering of TiC and SiC between two discharge cleaning methods by a simulation experiment. In the first type the cleaning depends upon reactions by low energy particles (Taylor, ECR etc., ~ 1 eV) and in the second type, upon high energy particles (glow, ~102 eV). We found the threshold values in ion energy to provoke chemical sputtering to be 130 eV for TiC and 80 eV for SiC approximately. Therefore we must take the chemical sputtering into consideration, When the glow discharge cleaning is applied.
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