Fully ion-implanted p +- n germanium avalanche photodiodes
1981; American Institute of Physics; Volume: 38; Issue: 6 Linguagem: Inglês
10.1063/1.92385
ISSN1520-8842
AutoresS. Kagawa, T. Kaneda, Takashi Mikawa, Y. Banba, Y. Toyama, Osamu Mikami,
Tópico(s)Advanced Semiconductor Detectors and Materials
ResumoGermanium avalanche photodiodes with a shallow p+-n junction have been fabricated using full ion implantation, together with a low temperature (650 °C), single-stage annealing process. This procedure yielded high-performance germanium avalanche photodiodes with a high rate of reproducibility. About 80% of the diodes obtained showed a dark current of 150–250 nA at 0.9 VB. At a multiplication factor of 10, low excess noise resulted (F≊6.5 at 1.55 mm and F = 8–9 at 1.3 mm), and deterioration of the response at 500 MHz was limited to 0.5–1 dB.
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