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Reliability and failure in single crystal silicon MEMS devices

2008; Elsevier BV; Volume: 48; Issue: 8-9 Linguagem: Inglês

10.1016/j.microrel.2008.07.018

1872-941X

A. Neels, Alex Dommann, Andreas Schifferle, O. Papes, Edoardo Mazza,

Nanowire Synthesis and Applications

In single crystal silicon (SCSi) MST devices, crystalline imperfection is recognized to favor failure. Defects are introduced by DRIE etching which is commonly used in SCSi structuring. However, thermal annealing improves the crystal quality. High resolution X-ray diffraction methods such as the rocking curve method and reciprocal space mapping can monitor crystalline imperfection in SCSi devices. A DRIE etched SCSi structure was built to study the crystal strain profile in dependence of the SCSi deformation by applying a mechanical force. Our investigations also include the numerical simulation of deformations.