Dislocation engineered β-FeSi2 light emitting diodes
2003; Elsevier BV; Volume: 206; Linguagem: Inglês
10.1016/s0168-583x(03)00788-2
ISSN1872-9584
AutoresM. A. Lourenço, R. Gwilliam, Guosheng Shao, K.P. Homewood,
Tópico(s)Semiconductor materials and devices
ResumoRoom temperature β-FeSi2 light emitting diodes have been fabricated by conventional ULSI processes using a recently developed dislocation engineering approach. The devices were fabricated by iron implantation into pre-grown abrupt silicon p–n junctions followed by low energy boron implantation to form the dislocation loops. Room temperature emission at ∼1.6 μm was obtained from most of the dislocation engineered devices, in contrast to standard ion beam synthesised β-FeSi2 diodes, where no electroluminescence was observed.
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