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High-Performance Low-Cost Organic Field-Effect Transistors with Chemically Modified Bottom Electrodes

2006; American Chemical Society; Volume: 128; Issue: 51 Linguagem: Inglês

10.1021/ja066092v

1943-2984

Chong‐an Di, Gui Yu, Yunqi Liu, Xinjun Xu, Dacheng Wei, Yabin Song, Yanming Sun, Ying Wang, Daoben Zhu, Jian Liu, Xinyu Liu, Dexin Wu,

Perovskite Materials and Applications

The characteristics of organic field-effect transistors (OFETs) were dramatically improved by chemically modifying the surface of the bottom-contact Ag or Cu source−drain (D−S) electrodes with a simple solution method. The contact resistance and energetic mismatch typically observed with Ag D−S electrodes in pentacene bottom-contact OFETs can be properly eliminated when modified by the Ag-TCNQ (TCNQ = 7,7,8,8-tetracyanoquinodimethane). The pentacene transistors with low-cost Ag-TCNQ-modified Ag bottom-contact electrodes exhibit outstanding electrical properties, which are comparable with that of the Au top-contact devices. It thus provides a novel way toward high-performance low-cost bottom-contact OFETs.