Grating coupling and intersubband absorption at 10 μm in GaAs/Al x Ga1− x As infrared quantum well waveguides
1992; American Institute of Physics; Volume: 71; Issue: 7 Linguagem: Inglês
10.1063/1.350911
ISSN1520-8850
AutoresJ.D. Ralston, Dominic F. G. Gallagher, P. Bittner, J. Fleißner, B. Dischler, P. Koidl,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoGrating coupling and intersubband absorption of ∼10-μm CO2 laser radiation are demonstrated in GaAs/AlxGa1−xAs mid-infrared single-mode waveguides grown by molecular beam epitaxy. The samples contain ten Si-doped GaAs quantum wells embedded within the waveguide core. Grating coupling in mesa waveguides fabricated from such samples is studied as a function of the wavelength and polarization of the incident laser light. The devices demonstrate selective absorption of TM polarized light, as dictated by intersubband absorption selection rules. The measured wavelength dependence of the optimal coupling angle is in good agreement with a simple grating-coupler analysis. Potential applications for infrared detection and integrated optics are discussed.
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