Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature
2010; American Institute of Physics; Volume: 97; Issue: 24 Linguagem: Inglês
10.1063/1.3525834
ISSN1520-8842
AutoresSafumi Suzuki, Masahiro Asada, Atsushi Teranishi, Hiroki Sugiyama, Haruki Yokoyama,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoFundamental oscillations up to 1.04 THz were achieved in resonant tunneling diodes at room temperature. A graded emitter and thin barriers were introduced in GaInAs/AlAs double-barrier resonant tunneling diodes for reductions of the transit time in the collector depletion region and the resonant tunneling time, respectively. Output powers were 7 μW at 1.04 THz and around 10 μW in 0.9–1 THz region. A change in oscillation frequency of about 4% with bias voltage was also obtained.
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