Reaction pathway analysis for dislocation nucleation from a Ni surface step
2009; American Institute of Physics; Volume: 106; Issue: 9 Linguagem: Inglês
10.1063/1.3254178
ISSN1520-8850
AutoresShotaro HARA, Satoshi IZUMI, Shinsuke Sakai,
Tópico(s)Semiconductor materials and devices
ResumoThreshold strain required for a thermally activated dislocation nucleation from a Ni surface step has been measured using an atomistic-based reaction pathway analysis. We show that the saddle-point configuration and the stress-dependent activation energy are strongly influenced by the presence of a surface step. Our results provide insight into the previous experimental findings concerning the mechanism on a coherency loss at the Ni∕Cu(001) interface. We conclude that the coherency strain caused by a lattice mismatch between Ni and Cu does not yield a sufficient driving force for the dislocation nucleation.
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