Monolithic GaAs photoreceiver for high-speed signal processing applications
1986; Institution of Engineering and Technology; Volume: 22; Issue: 3 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresW.S. Lee, Geoffrey Ryan Adams, Joseph Mun, Jason M. Smith,
Tópico(s)Radio Frequency Integrated Circuit Design
ResumoHigh-speed planar monolithically integrated GaAs photoreceivers have been fabricated by selective ion implantation into SI GaAs substrates. Their fabrication is fully compatible with existing GaAs LSI process schedules. A receiver upper cutoff frequency of 1.5 GHz and sensitivity of 112 V/W have been measured. The application of these devices in short-haul high-bit-rate data communication systems has been demonstrated in a 560 Mbit prototype optical data link, using packaged and fibre-coupled devices.
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