Portal de Periódicos da CAPES

Threshold-voltage drift of amorphous-silicon TFTs in integrated drivers for active-matrix LCDs

2003; Wiley; Volume: 11; Issue: 3 Linguagem: Inglês

10.1889/1.1825683

1938-3657

H. Lebrun, N. Szydlo, Eric Bidal,

Surface Roughness and Optical Measurements

Abstract— The threshold‐voltage drift of a‐Si TFTs for AMLCD integrated drivers was studied. Analysis of the drift shows two different kinetics. Both charges trapped in the insulator and defect generation in the a‐Si layer occur simultaneously. However, after a period of time charge trapping in the insulator becomes predominant.