Portal de Periódicos da CAPES

Photoexcited carrier transfer in InGaAs quantum dot structures: Dependence on the dot density

2000; American Institute of Physics; Volume: 76; Issue: 17 Linguagem: Inglês

10.1063/1.126359

1520-8842

S. Marcinkevičius, Rosa Leon,

Advanced Semiconductor Detectors and Materials

Carrier dynamics has been measured by time-resolved photoluminescence in self-assembled InGaAs/GaAs quantum-dot structures with dot density of the order of 108–1010 cm−2. The time of carrier transfer into a dot, which ranges from 2 to 20 ps, has been found to decrease with increasing quantum dot density. The temperature and photoexcited carrier density dependencies of the carrier transfer times suggest that potential barriers at wetting layer and quantum-dot interfaces hinder carrier capture in low-density quantum-dot structures.